RGTH00TS65GC13

ROHM Semiconductor
755-RGTH00TS65GC13
RGTH00TS65GC13

Mfr.:

Description:
IGBTs TO247 650V 50A TRNCH

Datasheet:
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In Stock: 840

Stock:
840 Can Dispatch Immediately
Factory Lead Time:
22 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp65.312 Rp65.312
Rp50.818 Rp508.180
5.400 Quote

Product Attribute Attribute Value Select Attribute
ROHM Semiconductor
Product Category: IGBTs
RoHS:  
Si
TO-247GE-3
Through Hole
Single
650 V
2.1 V
30 V
85 A
277 W
- 40 C
+ 175 C
Tube
Brand: ROHM Semiconductor
Gate-Emitter Leakage Current: 200 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 600
Subcategory: IGBTs
Part # Aliases: RGTH00TS65
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Attributes selected: 0

Datasheet

Specification Sheets

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CAHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

RGW 650V Field Stop Trench IGBTs

ROHM Semiconductor RGW 650V Field Stop Trench IGBTs offer a low collector-emitter saturation voltage in a small package. The RGW IGBTs feature high-speed switching, low switching loss, and built-in very fast and soft recovery FRD. The ROHM RGW 650V Field Stop Trench IGBTs are ideal for solar inverter, UPS, welding, IH, and PFC applications.

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