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RQ7E110AJTCR

Name: ROHM Semiconductor RQ7E110AJTCR
Brand: ROHM Semiconductor
SKU: 755-RQ7E110AJTCR
Price: 26051 IDR
Availability: InStock

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Mouser No:

755-RQ7E110AJTCR

Mfr. No:

RQ7E110AJTCR

Mfr.:

ROHM Semiconductor

Description:

MOSFETs Nch 30V 11A Si MOSFET

Datasheet:

RQ7E110AJTCR Datasheet (PDF)

ECAD Model:

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More Information

Learn more about ROHM Semiconductor RQ7E110AJTCR

In Stock: 825

Stock:: 825 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp26.051	Rp26.051
	Rp16.585	Rp165.850
	Rp11.448	Rp1.144.800
	Rp9.283	Rp4.641.500
	Rp8.237	Rp8.237.000
Full Reel (Order in multiples of 3000)
	Rp7.210	Rp21.630.000
	Rp6.696	Rp40.176.000
	Rp6.439	Rp57.951.000

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TSMT-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	11 A
Rds On - Drain-Source Resistance:	9 mOhms
Vgs - Gate-Source Voltage:	- 12 V, 12 V
Vgs th - Gate-Source Threshold Voltage:	1.5 V
Qg - Gate Charge:	22 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.5 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	79 ns
Forward Transconductance - Min:	13 S
Product Type:	MOSFETs
Rise Time:	18 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	87 ns
Typical Turn-On Delay Time:	22 ns
Part # Aliases:	RQ7E110AJ
Unit Weight:	10 mg

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Filter Document:

Datasheet

RQ7E110AJTCR Datasheet (PDF)

Other

Specification Sheets

Technical Resources

Test/Quality Data

RoHS (PDF)

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

Low-Gate Drive Voltage MOSFETs

ROHM Low-Gate Drive Voltage MOSFETs have a wide drive type of 0.9V to 10V. This wide drive type range offers support for applications ranging from a small signal to high power. ROHM Low-Gate Drive Voltage MOSFETs come in a wide choice of sizes as small as the microminiature package (0604 sizes). This variety of sizes helps to contribute to area space-saving in an application. These MOSFETs offer superior high-speed switching and low On-Resistance.

Silicon Power MOSFETs

ROHM Semiconductor Silicon Power MOSFETs feature ultra-fast switching speeds and low on-resistance. These MOSFETs are available in a wide lineup of packages, including the miniature 0604 size to save space in various designs.