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TP65H300G4LSG

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See Product Specifications

Mouser No:

227-TP65H0300G4LSG

Mfr. No:

TP65H300G4LSG

Mfr.:

Renesas Electronics

Description:

GaN FETs GAN FET 650V 6.5A PQFN88

Lifecycle:

Restricted Availability:

This part number is not currently available from Mouser. Product may be in limited distribution or a factory special order.

Datasheet:

TP65H300G4LSG Datasheet (PDF)

ECAD Model:

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Shipping Alert:

Mouser does not presently sell this product in your region.

Availability

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Alternative Packaging

Mfr. Part No.:

TP65H300G4LSG-TR

Packaging:

Reel, Cut Tape

Availability:

In Stock

Price:

Rp99.252

Min:

Similar Product

Mfr.:

Renesas Electronics

Mfr. No:

TP65H300G4LSG-TR

Description:

GaN FETs 650V, 240mOhm

Lifecycle:

Restricted Availability: This part number is not currently available from Mouser. Product may be in limited distribution or a factory special order.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Renesas Electronics
Product Category:	GaN FETs
Delivery Restrictions:	Mouser does not presently sell this product in your region.
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	PQFN-8x8-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	6.5 A
Rds On - Drain-Source Resistance:	312 mOhms
Vgs - Gate-Source Voltage:	- 18 V, + 18 V
Vgs th - Gate-Source Threshold Voltage:	2.6 V
Qg - Gate Charge:	9.6 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	21 W
Channel Mode:	Enhancement
Tradename:	SuperGaN
Brand:	Renesas Electronics
Fall Time:	10 ns
Moisture Sensitive:	Yes
Packaging:	Tube
Product Type:	GaN FETs
Rise Time:	3.4 ns
Series:	TP65H
Factory Pack Quantity:	50
Subcategory:	Transistors
Technology:	GaN
Typical Turn-Off Delay Time:	53 ns
Typical Turn-On Delay Time:	19.4 ns
Unit Weight:	4,096 g

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Datasheet

TP65H300G4LSG Datasheet (PDF)

Compliance Codes

CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Origin Classifications

Country of Origin:: Philippines
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

Gen IV SuperGaN® FETs

Renesas Electronics Gen IV SuperGaN^® FETs are normally off devices enabling AC-DC bridgeless totem-pole PFC designs. These FETs feature a high voltage GaN High Electron Mobility Transistor (HEMT) with a low voltage silicon MOSFET and offer superior reliability and performance. The Gen IV SuperGaN platform has advanced epi and patented design technologies that simplify manufacturability. This design technology improves efficiency over silicon with a low gate charge, output capacitance, crossover loss, and reverse recovery charge. Renesas Electronics Gen IV FETs are available in a variety of options for datacom, computing, lighting, automotive, and other applications.