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TP70H130G4PLSG-TR

Name: Renesas Electronics TP70H130G4PLSG-TR
Brand: Renesas Electronics
SKU: 227-TP70H130G4PLSGTR
Price: 23666 IDR
Availability: OutOfStock

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Mouser No:

227-TP70H130G4PLSGTR

Mfr. No:

TP70H130G4PLSG-TR

Mfr.:

Renesas Electronics

Description:

GaN FETs 700V, 130mohm GaN FET in 8x8 PQFN PP

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

TP70H130G4PLSG-TR Datasheet (PDF)

ECAD Model:

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Availability

Stock:: Non-Stocked

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Factory Lead Time:: 14 Weeks Estimated factory production time.

Enter Quantity:

Minimum: 3000 Multiples: 3000

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Full Reel (Order in multiples of 3000)
	Rp23.666	Rp70.998.000
	Rp22.749	Rp136.494.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Renesas Electronics
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	PQFN-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	700 V
Id - Continuous Drain Current:	16 A
Rds On - Drain-Source Resistance:	163 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	4.8 V
Qg - Gate Charge:	10.7 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	69.4 W
Channel Mode:	Enhancement
Tradename:	SuperGaN
Brand:	Renesas Electronics
Configuration:	Single
Fall Time:	14.7 ns
Packaging:	Reel
Product:	GaN FETs
Product Type:	GaN FETs
Rise Time:	4.3 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	1 N-Channel
Type:	SuperGaN
Typical Turn-Off Delay Time:	46 ns
Typical Turn-On Delay Time:	36.2 ns

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Datasheet

TP70H130G4PLSG-TR Datasheet (PDF)

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

Gen IV SuperGaN® FETs

Renesas Electronics Gen IV SuperGaN^® FETs are normally off devices enabling AC-DC bridgeless totem-pole PFC designs. These FETs feature a high voltage GaN High Electron Mobility Transistor (HEMT) with a low voltage silicon MOSFET and offer superior reliability and performance. The Gen IV SuperGaN platform has advanced epi and patented design technologies that simplify manufacturability. This design technology improves efficiency over silicon with a low gate charge, output capacitance, crossover loss, and reverse recovery charge. Renesas Electronics Gen IV FETs are available in a variety of options for datacom, computing, lighting, automotive, and other applications.