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TP70H150G4LSGB-TR

Name: Renesas Electronics TP70H150G4LSGB-TR
Brand: Renesas Electronics
SKU: 227-TP70H150G4LSGBTR
Price: 24767 IDR
Availability: OutOfStock

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Mouser No:

227-TP70H150G4LSGBTR

Mfr. No:

TP70H150G4LSGB-TR

Mfr.:

Renesas Electronics

Description:

GaN FETs 700V, 150mohm GaN FET in 8x8 PQFN

Datasheet:

TP70H150G4LSGB-TR Datasheet (PDF)

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Availability

Stock:: Non-Stocked

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Factory Lead Time:: 14 Weeks Estimated factory production time.

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Minimum: 3000 Multiples: 3000

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Full Reel (Order in multiples of 3000)
	Rp24.767	Rp74.301.000
	Rp24.400	Rp146.400.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Renesas Electronics
Product Category:	GaN FETs
RoHS:
Vds - Drain-Source Breakdown Voltage:	700 V
Tradename:	SuperGaN
Brand:	Renesas Electronics
Moisture Sensitive:	Yes
Packaging:	Reel
Product:	FETs
Product Type:	GaN FETs
Series:	Gen IV SuperGaN
Factory Pack Quantity:	3000
Subcategory:	Transistors
Technology:	GaN

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Datasheet

TP70H150G4LSGB-TR Datasheet (PDF)

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USHTS:: 8541497040
ECCN:: EAR99

Gen IV SuperGaN® FETs

Renesas Electronics Gen IV SuperGaN^® FETs are normally off devices enabling AC-DC bridgeless totem-pole PFC designs. These FETs feature a high voltage GaN High Electron Mobility Transistor (HEMT) with a low voltage silicon MOSFET and offer superior reliability and performance. The Gen IV SuperGaN platform has advanced epi and patented design technologies that simplify manufacturability. This design technology improves efficiency over silicon with a low gate charge, output capacitance, crossover loss, and reverse recovery charge. Renesas Electronics Gen IV FETs are available in a variety of options for datacom, computing, lighting, automotive, and other applications.