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TP70H300G4LSGB-TR

Name: Renesas Electronics TP70H300G4LSGB-TR
Brand: Renesas Electronics
SKU: 227-TP70H300G4LSGBTR
Price: 81089 IDR
Availability: OutOfStock

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Mouser No:

227-TP70H300G4LSGBTR

Mfr. No:

TP70H300G4LSGB-TR

Mfr.:

Renesas Electronics

Description:

GaN FETs 700V, 300mohm GaN FET in 8x8 PQFN

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

TP70H300G4LSGB-TR Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Renesas Electronics TP70H300G4LSGB-TR

Availability

Stock:: Non-Stocked

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Factory Lead Time:: 14 Weeks Estimated factory production time.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp81.089	Rp81.089
	Rp54.121	Rp541.210
	Rp41.645	Rp4.164.500
	Rp36.875	Rp18.437.500
	Rp31.555	Rp31.555.000
Full Reel (Order in multiples of 3000)
	Rp29.721	Rp89.163.000

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Renesas Electronics
Product Category:	GaN FETs
RoHS:
Vds - Drain-Source Breakdown Voltage:	700 V
Tradename:	SuperGaN
Brand:	Renesas Electronics
Moisture Sensitive:	Yes
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Product:	FETs
Product Type:	GaN FETs
Series:	Gen IV SuperGaN
Factory Pack Quantity:	3000
Subcategory:	Transistors
Technology:	GaN

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Datasheet

TP70H300G4LSGB-TR Datasheet (PDF)

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USHTS:: 8541497040
ECCN:: EAR99

Gen IV SuperGaN® FETs

Renesas Electronics Gen IV SuperGaN^® FETs are normally off devices enabling AC-DC bridgeless totem-pole PFC designs. These FETs feature a high voltage GaN High Electron Mobility Transistor (HEMT) with a low voltage silicon MOSFET and offer superior reliability and performance. The Gen IV SuperGaN platform has advanced epi and patented design technologies that simplify manufacturability. This design technology improves efficiency over silicon with a low gate charge, output capacitance, crossover loss, and reverse recovery charge. Renesas Electronics Gen IV FETs are available in a variety of options for datacom, computing, lighting, automotive, and other applications.