GANSPIN612TR

STMicroelectronics
511-GANSPIN612TR
GANSPIN612TR

Mfr.:

Description:
Motor/Motion/Ignition Controllers & Drivers High-voltage half-bridge GaN motor driver
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Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Learn more about STMicroelectronics GANSPIN612TR

In Stock: 175

Stock:
175 Can Dispatch Immediately
Factory Lead Time:
52 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1   Maximum: 25
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (IDR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
Rp133.375 Rp133.375
Rp102.921 Rp1.029.210
Rp95.216 Rp2.380.400
Full Reel (Order in multiples of 3000)
Rp95.216 Rp285.648.000
† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: Motor/Motion/Ignition Controllers & Drivers
RoHS:  
Motor Driver
5.5 A
- 40 C
+ 125 C
SMD/SMT
QFN-35
Reel
Cut Tape
MouseReel
Brand: STMicroelectronics
Moisture Sensitive: Yes
Number of Outputs: 1 Output
Operating Frequency: 200 kHz
Product Type: Motor / Motion / Ignition Controllers & Drivers
Series: MASTERGAN6
Factory Pack Quantity: 3000
Subcategory: PMIC - Power Management ICs
Supply Voltage - Max: 18 V
Supply Voltage - Min: 10.7 V
Tradename: GaNSPIN
Unit Weight: 150 mg
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Attributes selected: 0

Datasheet

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Compliance Codes
USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99
Origin Classifications
Country of Origin:
Singapore
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

GANSPIN612 Half-Bridge GaN Motor Driver

STMicroelectronics GANSPIN612 Half-Bridge GaN Motor Driver is an advanced power system-in-package (SiP) integrating two enhancement mode GaN transistors in a half-bridge configuration driven by a state-of-the-art high-voltage, high-frequency gate driver. The integrated power GaNs have RDS(ON) of 270mΩ and a 650V drain-source breakdown voltage, while the integrated bootstrap diode can easily supply the high-side of the embedded gate driver.

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