MASTERGAN4TR

STMicroelectronics
511-MASTERGAN4TR
MASTERGAN4TR

Mfr.:

Description:
Gate Drivers High power density 600V half-bridge driver with two enhancement mode GaN HEMTs
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Datasheet:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
26 Weeks Estimated factory production time.
Long lead time reported on this product.
Minimum: 3000   Multiples: 3000
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Full Reel (Order in multiples of 3000)
Rp81.273 Rp243.819.000

Alternative Packaging

Mfr. Part No.:
MASTERGAN4
Packaging:
Tray
Availability:
In Stock
Price:
Rp158.876
Min:
1

Similar Product

STMicroelectronics MASTERGAN4
STMicroelectronics
Gate Drivers High power density 600V half-bridge driver with two enhancement mode GaN HEMTs
Compare With Current Part

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: Gate Drivers
RoHS:  
Half-Bridge Drivers
Half-Bridge
SMD/SMT
QFN-31
2 Driver
3 Output
- 40 C
+ 125 C
MASTERGAN
Reel
Brand: STMicroelectronics
Features: 600 V System-in-Package Integrating Half-Bridge Gate Driver
Input Voltage - Max: 15 V
Input Voltage - Min: 3.3 V
Moisture Sensitive: Yes
Product Type: Gate Drivers
Rds On - Drain-Source Resistance: 225 mOhms
Factory Pack Quantity: 3000
Subcategory: PMIC - Power Management ICs
Unit Weight: 150 mg
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Attributes selected: 0

Datasheet

PCN

Compliance Codes
CAHTS:
8542390000
USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99
Origin Classifications
Country of Origin:
Taiwan
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

MASTERGAN GaN Half-Bridge High Voltage Drivers

STMicroelectronics MASTERGAN GaN Half-Bridge High Voltage Drivers implement a high-power-density power supply with the integration of both a gate driver and two enhancement-mode GaN transistors in a half-bridge configuration. The integrated power GaNs feature an RDS(ON) of 150mΩ and a 650V drain-source breakdown voltage. The integrated bootstrap diode can quickly supply the high side of the embedded gate driver.

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