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SCT027HU65G3AG

Name: STMicroelectronics SCT027HU65G3AG
Brand: STMicroelectronics
SKU: 511-SCT027HU65G3AG
Price: 248038 IDR
Availability: OutOfStock

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Mouser No:

511-SCT027HU65G3AG

Mfr. No:

SCT027HU65G3AG

Mfr.:

STMicroelectronics

Description:

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A

Complete Your Design

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

SCT027HU65G3AG Datasheet (PDF)

ECAD Model:

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Availability

Stock:: 0

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On Order:: 400

Expected 31/08/2026
Factory Lead Time:: 32

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp248.038	Rp248.038
	Rp185.111	Rp1.851.110
	Rp160.161	Rp16.016.100
Full Reel (Order in multiples of 600)
	Rp152.639	Rp91.583.400

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	SiC MOSFETs
RoHS:
Qualification:	AEC-Q100
Brand:	STMicroelectronics
Packaging:	Reel
Packaging:	Cut Tape
Product Type:	SiC MOSFETS
Factory Pack Quantity:	600
Subcategory:	Transistors

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Datasheet

SCT027HU65G3AG Datasheet (PDF)

PCN

Product Change Notification 2025-11-26 (PDF)

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Compliance Codes

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Japan
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials' advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance R_DS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. The STMicro 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.