SCT040TO65G3

STMicroelectronics
511-SCT040TO65G3
SCT040TO65G3

Mfr.:

Description:
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
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Lifecycle:
New Product:
New from this manufacturer.
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Learn more about STMicroelectronics SCT040TO65G3

In Stock: 8

Stock:
8
Can Dispatch Immediately
On Order:
1.800
Expected 13/07/2026
Factory Lead Time:
32
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp188.964 Rp188.964
Rp129.890 Rp1.298.900
Rp98.518 Rp9.851.800
Rp98.335 Rp49.167.500
Full Reel (Order in multiples of 1800)
Rp91.730 Rp165.114.000

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: SiC MOSFETs
RoHS:  
SMD/SMT
TOLL-8
N-Channel
1 Channel
650 V
35 A
63 mOhms
- 10 V, + 22 V
3 V
42.5 nC
- 55 C
+ 175 C
288 W
Enhancement
Brand: STMicroelectronics
Configuration: Single
Fall Time: 16 ns
Packaging: Reel
Packaging: Cut Tape
Product: SiC MOSFETS
Product Type: SiC MOSFETS
Rise Time: 5 ns
Factory Pack Quantity: 1800
Subcategory: Transistors
Technology: SiC
Typical Turn-Off Delay Time: 36 ns
Typical Turn-On Delay Time: 11 ns
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Datasheet

PCN

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Compliance Codes
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials' advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance RDS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. The STMicro 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.  

650V 3rd Gen SiC MOSFETs

STMicroelectronics 650V 3rd Generation Silicon Carbide (SiC) MOSFETs feature low on-state resistance (RDS(on)) per area, even at high temperatures, and excellent switching performance. This translates into more efficient and compact systems. The SiC MOSFETs feature excellent switching performance over IGBTs, simplifying the thermal design of power electronic systems. These 650V SiC MOSFETs have been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The low RDS(on), low capacitances, and high switching operations improve application performance in frequency, energy efficiency, system size, and weight reduction.

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