SCT070HU120G3AG

STMicroelectronics
511-SCT070HU120G3AG
SCT070HU120G3AG

Mfr.:

Description:
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package
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In Stock: 73

Stock:
73
Can Dispatch Immediately
On Order:
1.200
Expected 04/05/2026
Factory Lead Time:
22
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp244.552 Rp244.552
Rp168.783 Rp1.687.830
Rp151.721 Rp15.172.100
Full Reel (Order in multiples of 600)
Rp144.933 Rp86.959.800

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: SiC MOSFETs
RoHS:  
SMD/SMT
HU3PAK-7
N-Channel
1 Channel
1.2 kV
30 A
87 mOhms
- 18 V, + 18 V
4.2 V
37 nC
- 55 C
+ 175 C
223 W
Enhancement
AEC-Q101
Brand: STMicroelectronics
Configuration: Single
Country of Assembly: JP
Country of Diffusion: Not Available
Country of Origin: JP
Fall Time: 9.9 ns
Packaging: Reel
Packaging: Cut Tape
Product Type: SiC MOSFETS
Rise Time: 26.6 ns
Factory Pack Quantity: 600
Subcategory: Transistors
Technology: SiC
Typical Turn-Off Delay Time: 17.6 ns
Typical Turn-On Delay Time: 18.7 ns
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CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

SCTW70N120G2V 1200V 91A SiC Power MOSFETs

STMicroelectronics SCTW70N120G2V 1200V 91A SiC (Silicon Carbide) Power MOSFET features minimal ON-resistance and excellent switching performance, almost independent of temperature, due to the advanced, innovative properties of wide bandgap materials. The SCTW70N120G2V also offers a high-speed, robust intrinsic body diode and extremely low gate charge and input capacities. A high-temperature rating of +200°C enables the improved thermal design of power electronics systems.

Automotive-Grade Silicon Carbide Power MOSFETs

STMicroelectronics  Automotive-Grade Silicon Carbide Power MOSFETs are  developed using ST's  advanced and innovative 2nd/3rd generation SiC MOSFET technology. The devices  feature low on-resistance per unit area and very good switching  performance. The MOSFETs feature a very high operating temperature capability (TJ = 200°C), and a very fast and robust intrinsic body diode.

Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials' advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance RDS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. The STMicro 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.  

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