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SCTL35N65G2V

Name: STMicroelectronics SCTL35N65G2V
Brand: STMicroelectronics
SKU: 511-SCTL35N65G2V
Price: 293903 IDR
Availability: InStock

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Mouser No:

511-SCTL35N65G2V

Mfr. No:

SCTL35N65G2V

Mfr.:

STMicroelectronics

Description:

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac

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Datasheet:

SCTL35N65G2V Datasheet (PDF)

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In Stock: 2.329

Stock:: 2.329 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 2329 will be subject to minimum order requirements.

Long lead time reported on this product.

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Unit Price:

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp293.903	Rp293.903
	Rp207.677	Rp2.076.770
	Rp190.982	Rp19.098.200
	Rp190.798	Rp95.399.000
	Rp190.615	Rp190.615.000
Full Reel (Order in multiples of 3000)
	Rp155.941	Rp467.823.000
6.000	Quote

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	PowerFLAT-5
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	40 A
Rds On - Drain-Source Resistance:	67 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Qg - Gate Charge:	73 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	417 W
Channel Mode:	Enhancement
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	14 ns
Moisture Sensitive:	Yes
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Product Type:	SiC MOSFETS
Rise Time:	ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	35 ns
Typical Turn-On Delay Time:	16 ns
Unit Weight:	180 mg

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Datasheet

SCTL35N65G2V Datasheet (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials' advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance R_DS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. The STMicro 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.

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STMicroelectronics HB/HB2 Series Insulated-Gate Bipolar Transistors (IGBTs) combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary Trench Gate Field-Stop (TGFS) structure.