SCTWA10N120

STMicroelectronics
511-SCTWA10N120
SCTWA10N120

Mfr.:

Description:
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 12 A, 550 mOhm
Complete Your Design

Lifecycle:
End of Life:
Scheduled for obsolescence and will be discontinued by the manufacturer.
Datasheet:
ECAD Model:
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In Stock: 10

Stock:
10 Can Dispatch Immediately
Quantities greater than 10 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
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Ext. Price:
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Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp181.258 Rp181.258
Rp136.494 Rp1.364.940

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: SiC MOSFETs
RoHS:  
Through Hole
HiP-247-3
N-Channel
1 Channel
1.2 kV
12 A
690 mOhms
- 10 V, + 25 V
3.5 V
21 nC
- 55 C
+ 200 C
110 W
Enhancement
Brand: STMicroelectronics
Packaging: Tube
Product Type: SiC MOSFETS
Series: SCTWA10N120
Factory Pack Quantity: 600
Subcategory: Transistors
Technology: SiC
Unit Weight: 4,430 g
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Attributes selected: 0

Datasheet

EOL

PCN

Compliance Codes
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

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