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STB120N4LF6

Name: STMicroelectronics STB120N4LF6
Brand: STMicroelectronics
SKU: 511-STB120N4LF6
Price: 52470 IDR
Availability: OutOfStock

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Mouser No:

511-STB120N4LF6

Mfr. No:

STB120N4LF6

Mfr.:

STMicroelectronics

Description:

MOSFETs N-Ch 40V 3.1 Ohm STripFET VI DeepGATE

Complete Your Design

Datasheet:

STB120N4LF6 Datasheet (PDF)

ECAD Model:

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Learn more about STMicroelectronics STB120N4LF6

Availability

Stock:: 0

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On Order:: 1.490

Expected 04/01/2027
Factory Lead Time:: 26

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 1000)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp52.470	Rp52.470
	Rp33.940	Rp339.400
	Rp23.483	Rp2.348.300
	Rp19.997	Rp9.998.500
Full Reel (Order in multiples of 1000)
	Rp17.080	Rp17.080.000

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-3 (TO-263-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	80 A
Rds On - Drain-Source Resistance:	4 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	80 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	110 W
Channel Mode:	Enhancement
Qualification:	AEC-Q100
Tradename:	STripFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	STMicroelectronics
Configuration:	Single
Product Type:	MOSFETs
Series:	STB120N4LF6
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Unit Weight:	4 g

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Datasheet

STB120N4LF6 Datasheet (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541210000
MXHTS:: 85412101
ECCN:: EAR99

AEC-Q101 Qualified STripFET Power MOSFETs

STMicroelectronics AEC-Q101 Qualified STripFET Power MOSFETs utilize ST's proprietary trench-based low voltage technology, achieving extremely low conduction losses. These STMicroelectronics power MOSFETs minimize the energy normally lost in electrical drives, leading to greater efficiency and making them suitable for many applications. Housed in industry-standard TO-252 and TO-263 SMD packages with R_DS(on) ranging from 3mΩ to 12.5mΩ, these devices perform well in most low-voltage automotive applications. This product range includes both standard and logic-level thresholds.

STripFET Power MOSFETs

STMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET technology with a new gate structure. The resulting STripFET Power MOSFET exhibits the high current and low R_DS(on) required by automotive and industrial switching applications such as motor control, uninterruptible power supplies (UPS), DC/DC converters, induction heater vaporizers, and solar. STMicroelectronics STripFET Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses, and high power density.