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STB25N018M9

Name: STMicroelectronics STB25N018M9
Brand: STMicroelectronics
SKU: 511-STB25N018M9
Price: 112461 IDR
Availability: InStock

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Mouser No:

511-STB25N018M9

Mfr. No:

STB25N018M9

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 250 V, 14 mOhm typ., 54 A MDmesh M9 Power MOSFET in a D2PAK package

Complete Your Design

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

STB25N018M9 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about STMicroelectronics STB25N018M9

In Stock: 114

Stock:: 114

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On Order:: 1.000
Factory Lead Time:: 16

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 1000)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp112.461	Rp112.461
	Rp73.751	Rp737.510
	Rp54.304	Rp5.430.400
	Rp48.984	Rp24.492.000
Full Reel (Order in multiples of 1000)
	Rp41.462	Rp41.462.000
	Rp40.545	Rp81.090.000
	Rp38.710	Rp193.550.000

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	250 V
Id - Continuous Drain Current:	56 A
Rds On - Drain-Source Resistance:	18 mOhms
Vgs - Gate-Source Voltage:	30 V
Vgs th - Gate-Source Threshold Voltage:	4.2 V
Qg - Gate Charge:	85 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	320 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	31 ns
Product Type:	MOSFETs
Rise Time:	3.6 ns
Series:	MDmesh M9
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	61 ns
Typical Turn-On Delay Time:	23 ns
Unit Weight:	1,444 g

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Datasheet

STB25N018M9 Datasheet (PDF)

Compliance Codes

USHTS:: 8541290055
TARIC:: 8541290000
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

MDmesh™ M9 Power MOSFETs

STMicroelectronics MDmesh™ M9 Power MOSFETs feature enhanced device structure, low ON resistance, and low gate charge values. These power MOSFETs offer high reverse diode dv/dt and MOSFET dv/dt ruggedness, high power density, and low conduction losses. The MDmesh M9 Power MOSFETs also offer high switching speed, high efficiency, and low switching power losses. These power MOSFETs are designed with innovative high-voltage super-junction technology that delivers impressive Figure of Merit ((FoM). The high FoM enables higher power levels and density for more compact solutions. Typical applications include servers, telecom data centers, 5G power stations, microinverters, and fast chargers.