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STD110N8F6

Name: STMicroelectronics STD110N8F6
Brand: STMicroelectronics
SKU: 511-STD110N8F6
Price: 47516 IDR
Availability: InStock

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Mouser No:

511-STD110N8F6

Mfr. No:

STD110N8F6

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 80 V, 0.0056 Ohm typ., 110 A, STripFET F6 Power MOSFET in a DPAK packa

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Datasheet:

STD110N8F6 Datasheet (PDF)

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In Stock: 3.109

Stock:: 3.109 Can Dispatch Immediately

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Factory Lead Time:: 15 Weeks Estimated factory production time for quantities greater than shown.

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Unit Price:

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp47.516	Rp47.516
	Rp27.702	Rp277.020
	Rp19.447	Rp1.944.700
	Rp15.869	Rp7.934.500
	Rp15.833	Rp15.833.000
Full Reel (Order in multiples of 2500)
	Rp14.493	Rp36.232.500
	Rp12.989	Rp129.890.000

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	80 A
Rds On - Drain-Source Resistance:	6.5 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	150 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	167 W
Channel Mode:	Enhancement
Tradename:	STripFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	48 ns
Product Type:	MOSFETs
Rise Time:	61 ns
Series:	STD110N8F6
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	162 ns
Typical Turn-On Delay Time:	24 ns
Unit Weight:	330 mg

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Datasheet

STD110N8F6 Datasheet (PDF)

PCN

Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

STripFET VI™ Power MOSFETs

STMicroelectronics STripFET VI™ Power MOSFETs are enhancement-mode MOSFETs that benefit from STMicroelectronics proprietary STripFET technology with an updated gate structure. The resulting STripFET Power MOSFET uses a trench technology for high efficiency and low R_DS(on) required by various automotive and industrial switching applications such as motor control, UPS, DC/DC converters, induction heater vaporizers, and solar. These STMicroelectronics MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses, and high power density.

STripFET Power MOSFETs

STMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET technology with a new gate structure. The resulting STripFET Power MOSFET exhibits the high current and low R_DS(on) required by automotive and industrial switching applications such as motor control, uninterruptible power supplies (UPS), DC/DC converters, induction heater vaporizers, and solar. STMicroelectronics STripFET Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses, and high power density.