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STDRIVEG211QTR

Name: STMicroelectronics STDRIVEG211QTR
Brand: STMicroelectronics
SKU: 511-STDRIVEG211QTR
Price: 73751 IDR
Availability: OutOfStock

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Mouser No:

511-STDRIVEG211QTR

Mfr. No:

STDRIVEG211QTR

Mfr.:

STMicroelectronics

Description:

Gate Drivers High voltage and high-speed half-bridge gate driver for GaN power switches 220V

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Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

STDRIVEG211QTR Datasheet (PDF)

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Learn more about STMicroelectronics STDRIVEG211QTR

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On Order:: 700

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Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp73.751	Rp73.751
	Rp48.800	Rp488.000
	Rp44.397	Rp1.109.925
	Rp37.793	Rp3.779.300
	Rp35.775	Rp8.943.750
	Rp32.106	Rp16.053.000
	Rp30.087	Rp30.087.000
Full Reel (Order in multiples of 3000)
	Rp25.501	Rp76.503.000

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	Gate Drivers
RoHS:
Product:	Gate Drivers
Type:	Half-Bridge
Mounting Style:	SMD/SMT
Package/Case:	QFN-18
Number of Drivers:	2 Driver
Number of Outputs:	2 Output
Supply Voltage - Min:	10.7 V
Supply Voltage - Max:	18 V
Configuration:	Inverting, Non-Inverting
Rise Time:	22 ns
Fall Time:	11 ns
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	STMicroelectronics
Product Type:	Gate Drivers
Propagation Delay - Max:	45 ns
Rds On - Drain-Source Resistance:	7 Ohms
Shutdown:	Shutdown
Factory Pack Quantity:	3000
Subcategory:	PMIC - Power Management ICs
Technology:	GaN

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Datasheet

STDRIVEG211QTR Datasheet (PDF)

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USHTS:: 8542390090
MXHTS:: 8542399999
ECCN:: EAR99

STDRIVEG600/210/211 Half-Bridge Gate Drivers

STMicroelectronics STDRIVEG600 and STDRIVEG210/211 Half-Bridge Gate Drivers are single-chip half-bridge gate drivers for GaN (Gallium Nitride) eHEMTs (Enhancement-mode High-Electron-Mobility Transistors) or N-channel power MOSFETs. The high side of the STDRIVEG600 is designed to withstand voltages up to 600V and is suitable for designs with bus voltage up to 500V. These devices are ideal for driving high-speed GaN and silicon FETs due to high current capability, short propagation delay, and operation with a supply voltage down to 5V.

STDRIVEG211 Half-Bridge Gate Drivers

STMicroelectronics STDRIVEG211 Half-Bridge Gate Drivers are designed for N‑channel enhancement mode GaN, and the high-side driver section can withstand a voltage rail up to 220V. These drivers feature high current capability, short propagation delay with excellent delay matching, and integrated LDOs. This makes them optimized for driving high-speed GaN. The STDRIVEG211 half-bridge gate drivers feature supply UVLOs tailored to hard switching applications, interlocking to avoid cross-conduction conditions, and an overcurrent comparator with SmartSD. These drivers offer an extended range for input pins that allows easy interfacing with controllers. A standby pin allows for reducing the power consumption during inactive periods or burst mode. Applications include solar micro inverters, Class D audio amplifiers, E-bikes, LED lighting, USB-C, power tools, and robotics.