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STDRIVEG212QTR

Name: STMicroelectronics STDRIVEG212QTR
Brand: STMicroelectronics
SKU: 511-STDRIVEG212QTR
Price: 74485 IDR
Availability: InStock

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Mouser No:

511-STDRIVEG212QTR

Mfr. No:

STDRIVEG212QTR

Mfr.:

STMicroelectronics

Description:

Gate Drivers High voltage and high-speed half-bridge gate driver for GaN power switches

Complete Your Design

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

STDRIVEG212QTR Datasheet (PDF)

ECAD Model:

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More Information

Learn more about STMicroelectronics STDRIVEG212QTR

In Stock: 668

Stock:: 668 Can Dispatch Immediately

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Factory Lead Time:: 52 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp74.485	Rp74.485
	Rp66.963	Rp669.630
	Rp55.772	Rp1.394.300
	Rp50.085	Rp5.008.500
	Rp44.214	Rp11.053.500
	Rp41.279	Rp20.639.500
	Rp30.087	Rp30.087.000
Full Reel (Order in multiples of 3000)
	Rp25.317	Rp75.951.000

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	Gate Drivers
RoHS:
Product:	Gate Driver
Type:	Half-Bridge
Mounting Style:	SMD/SMT
Package/Case:	QFN-18
Number of Drivers:	2 Driver
Number of Outputs:	3 Output
Output Current:	1.8 A
Supply Voltage - Min:	10.3 V
Supply Voltage - Max:	18 V
Configuration:	Inverting, Non-Inverting
Rise Time:	22 ns
Fall Time:	13 ns
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	STMicroelectronics
Development Kit:	EVLSTDRIVEG212
Maximum Turn-Off Delay Time:	65 ns
Maximum Turn-On Delay Time:	65 ns
Moisture Sensitive:	Yes
Operating Supply Current:	900 uA
Output Voltage:	220 V
Product Type:	Gate Drivers
Propagation Delay - Max:	65 ns
Rds On - Drain-Source Resistance:	4.8 Ohms
Shutdown:	Shutdown
Factory Pack Quantity:	3000
Subcategory:	PMIC - Power Management ICs
Technology:	GaN
Tradename:	STDRIVE

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Datasheet

STDRIVEG212QTR Datasheet (PDF)

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Compliance Codes

USHTS:: 8542390090
MXHTS:: 8542399999
ECCN:: EAR99

Origin Classifications

Country of Origin:: Thailand
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

STDRIVEG212 220V Half-Bridge Gate Driver

STMicroelectronics STDRIVEG212 220V High-Speed Half-Bridge Gate Driver is optimized for 5V driving enhanced-mode GaN HEMTs. The high-side driver section is designed to support a voltage rail of up to 220V and can be easily supplied by the integrated bootstrap diode. High-current capability, short propagation delay with excellent delay matching, and integrated LDOs make the STDRIVEG212 optimized for driving high-speed GaN.