STDRIVEG600

STMicroelectronics
511-STDRIVEG600
STDRIVEG600

Mfr.:

Description:
Gate Drivers High voltage half-bridge gate driver for GaN transistors
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Datasheet:
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In Stock: 877

Stock:
877 Can Dispatch Immediately
Factory Lead Time:
18 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp91.547 Rp91.547
Rp71.549 Rp715.490
Rp62.927 Rp1.573.175
Rp59.808 Rp5.980.800
Rp57.056 Rp14.264.000
Rp55.221 Rp27.610.500
Rp52.286 Rp52.286.000
Rp50.268 Rp100.536.000

Alternative Packaging

Mfr. Part No.:
STDRIVEG600TR
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
Rp74.668
Min:
1

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: Gate Drivers
RoHS:  
Half-Bridge Drivers
High-Side, Low-Side
SMD/SMT
SOIC-16
2 Driver
1 Output
5.5 A, 6 A
4.75 V
20 V
7 ns
5 ns
- 40 C
+ 125 C
Tube
Brand: STMicroelectronics
Logic Type: CMOS, TTL
Moisture Sensitive: Yes
Output Voltage: 520 V
Product Type: Gate Drivers
Factory Pack Quantity: 1000
Subcategory: PMIC - Power Management ICs
Technology: GaN
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CNHTS:
8542399000
USHTS:
8542390090
ECCN:
EAR99

STDRIVEG600/210/211 Half-Bridge Gate Drivers

STMicroelectronics STDRIVEG600 and STDRIVEG210/211 Half-Bridge Gate Drivers are single-chip half-bridge gate drivers for GaN (Gallium Nitride) eHEMTs (Enhancement-mode High-Electron-Mobility Transistors) or N-channel power MOSFETs. The high side of the STDRIVEG600 is designed to withstand voltages up to 600V and is suitable for designs with bus voltage up to 500V. These devices are ideal for driving high-speed GaN and silicon FETs due to high current capability, short propagation delay, and operation with a supply voltage down to 5V.

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