STDRIVEG611Q

STMicroelectronics
511-STDRIVEG611Q
STDRIVEG611Q

Mfr.:

Description:
Gate Drivers High voltage and high-speed half-bridge gate driver for GaN power switches
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Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Learn more about STMicroelectronics STDRIVEG611Q

In Stock: 230

Stock:
230 Can Dispatch Immediately
Factory Lead Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp55.221 Rp55.221
Rp41.462 Rp414.620
Rp37.976 Rp949.400
Rp34.124 Rp3.412.400
Rp31.188 Rp7.797.000
Rp30.271 Rp15.135.500
Rp29.904 Rp29.904.000
Rp29.170 Rp72.925.000
Rp28.620 Rp140.238.000

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: Gate Drivers
RoHS:  
Gate Drivers
Half-Bridge
SMD/SMT
QFN-18
2 Driver
3 Output
10.6 V
18 V
Inverting, Non-Inverting
11 ns
22 ns
- 40 C
+ 125 C
Tray
Brand: STMicroelectronics
Input Voltage - Max: 20 V
Input Voltage - Min: 3.3 V
Maximum Turn-Off Delay Time: 60 ns
Maximum Turn-On Delay Time: 60 ns
Moisture Sensitive: Yes
Product Type: Gate Drivers
Shutdown: No Shutdown
Factory Pack Quantity: 4900
Subcategory: PMIC - Power Management ICs
Technology: GaN
Unit Weight: 44 mg
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Attributes selected: 0

Datasheet

CNHTS:
8542399000
USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99

STDRIVEG611 Half-Bridge Gate Driver

STMicroelectronics STDRIVEG611 Half-Bridge Gate Driver is a high-voltage half-bridge gate driver for N-channel Enhancement Mode GaN. The high-side driver section is designed to stand a voltage rail up to 600V and can be easily supplied by the integrated bootstrap diode. High current capability, short propagation delay with excellent delay matching, and integrated LDOs make the STDRIVEG611 optimized for driving high-speed GaN.

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