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STF16N65M5

Name: STMicroelectronics STF16N65M5
Brand: STMicroelectronics
SKU: 511-STF16N65M5
Price: 78154 IDR
Availability: InStock

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Mouser No:

511-STF16N65M5

Mfr. No:

STF16N65M5

Mfr.:

STMicroelectronics

Description:

MOSFETs N-CH 65V 12A MDMESH

Complete Your Design

Datasheet:

STF16N65M5 Datasheet (PDF)

ECAD Model:

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In Stock: 8.291

Stock:: 8.291 Can Dispatch Immediately

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp78.154	Rp78.154
	Rp39.811	Rp398.110
	Rp36.142	Rp3.614.200
	Rp29.721	Rp14.860.500
	Rp27.702	Rp27.702.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	12 A
Rds On - Drain-Source Resistance:	279 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	31 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	25 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	7 ns
Product Type:	MOSFETs
Rise Time:	9 ns
Series:	Mdmesh M5
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	30 ns
Typical Turn-On Delay Time:	25 ns
Unit Weight:	2 g

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Datasheet

STF16N65M5 Datasheet (PDF)

PCN

Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541210000
MXHTS:: 85412101
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low R_DS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

N-channel MDmesh V Power MOSFET

STMicroelectronics 550 and 650V MDmesh M5 series of super-junction Power MOSFETs offer outstanding R_DS(on) values to significantly reduce losses in line-voltage PFC circuits and power supplies. This in turn enables new generations of electronic products to offer greater energy savings, superior power density, and more compact applications. This new technology will help product designers tackle emerging challenges such as the high-efficiency targets of new eco-design directives, and will also benefit the renewable energy sector by saving vital watts normally lost in power-control modules.