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STF20N65M5

Name: STMicroelectronics STF20N65M5
Brand: STMicroelectronics
SKU: 511-STF20N65M5
Price: 64761 IDR
Availability: InStock

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Mouser No:

511-STF20N65M5

Mfr. No:

STF20N65M5

Mfr.:

STMicroelectronics

Description:

MOSFETs N-ch 650 V 0.168 Ohm 18 A MDmesh M5

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Datasheet:

STF20N65M5 Datasheet (PDF)

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In Stock: 5.856

Stock:: 5.856 Can Dispatch Immediately

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Factory Lead Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp64.761	Rp64.761
	Rp29.170	Rp291.700
	Rp27.336	Rp2.733.600
	Rp24.217	Rp12.108.500
	Rp22.382	Rp22.382.000
	Rp21.098	Rp42.196.000
25.000	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	18 A
Rds On - Drain-Source Resistance:	190 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	36 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	130 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	7.5 ns
Product Type:	MOSFETs
Rise Time:	7.5 ns
Series:	Mdmesh M5
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Unit Weight:	2 g

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Datasheet

STF20N65M5 Datasheet (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541210000
MXHTS:: 85412101
ECCN:: EAR99

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low R_DS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

N-channel MDmesh V Power MOSFET

STMicroelectronics 550 and 650V MDmesh M5 series of super-junction Power MOSFETs offer outstanding R_DS(on) values to significantly reduce losses in line-voltage PFC circuits and power supplies. This in turn enables new generations of electronic products to offer greater energy savings, superior power density, and more compact applications. This new technology will help product designers tackle emerging challenges such as the high-efficiency targets of new eco-design directives, and will also benefit the renewable energy sector by saving vital watts normally lost in power-control modules.