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STGF15H60DF

Name: STMicroelectronics STGF15H60DF
Brand: STMicroelectronics
SKU: 511-STGF15H60DF
Price: 42563 IDR
Availability: InStock

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Mouser No:

511-STGF15H60DF

Mfr. No:

STGF15H60DF

Mfr.:

STMicroelectronics

Description:

IGBTs Trench gate H series 600V 15A HiSpd

Complete Your Design

Datasheet:

STGF15H60DF Datasheet (PDF)

ECAD Model:

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Learn more about STMicroelectronics STGF15H60DF

In Stock: 722

Stock:: 722

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On Order:: 2.000

Expected 16/11/2026
Factory Lead Time:: 15

Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp42.563	Rp42.563
	Rp20.731	Rp207.310
	Rp18.529	Rp1.852.900
	Rp14.769	Rp7.384.500
	Rp13.521	Rp13.521.000
	Rp12.530	Rp25.060.000
	Rp12.494	Rp62.470.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-220-3 FP
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	600 V
Collector-Emitter Saturation Voltage:	1.6 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	30 A
Pd - Power Dissipation:	30 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	STGF15H60DF
Packaging:	Tube
Brand:	STMicroelectronics
Continuous Collector Current Ic Max:	15 A
Gate-Emitter Leakage Current:	250 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	1000
Subcategory:	IGBTs
Unit Weight:	2,300 g

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Datasheet

STGF15H60DF Datasheet (PDF)

PCN

Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: China
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

IGBT V Series

STMicroelectronics 600V trench-gate field-stop very high-speed IGBT V series features the industry's lowest Eoff. Combined with a saturation voltage as low as 1.8V and a maximum operating junction temperature of 175°C, they enable increased system efficiency, higher switching frequencies (up to 120kHz), and simplified thermal and EMI design.