STGF20M65DF2

STMicroelectronics
511-STGF20M65DF2
STGF20M65DF2

Mfr.:

Description:
IGBTs Trench gate field-stop IGBT M series, 650 V 20 A low loss
Complete Your Design

Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

In Stock: 478

Stock:
478 Can Dispatch Immediately
Factory Lead Time:
15 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp43.847 Rp43.847
Rp21.465 Rp214.650
Rp19.263 Rp1.926.300
Rp15.411 Rp7.705.500
Rp14.163 Rp14.163.000
Rp13.117 Rp26.234.000
Rp12.310 Rp61.550.000

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
TO-220FP-3
Through Hole
Single
650 V
1.55 V
- 20 V, 20 V
40 A
32.6 W
- 55 C
+ 175 C
STGF20M65DF2
Tube
Brand: STMicroelectronics
Continuous Collector Current Ic Max: 40 A
Gate-Emitter Leakage Current: 250 uA
Product Type: IGBT Transistors
Factory Pack Quantity: 1000
Subcategory: IGBTs
Unit Weight: 2 g
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

An unexpected error has occurred.


Have a question? Please visit the Help Centre.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.