STGF20M65DF2

STMicroelectronics
511-STGF20M65DF2
STGF20M65DF2

Mfr.:

Description:
IGBTs Trench gate field-stop IGBT M series, 650 V 20 A low loss
Complete Your Design

Datasheet:
ECAD Model:
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In Stock: 468

Stock:
468 Can Dispatch Immediately
Factory Lead Time:
15 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp46.599 Rp46.599
Rp22.749 Rp227.490
Rp20.548 Rp2.054.800
Rp16.328 Rp8.164.000
Rp15.007 Rp15.007.000
Rp14.090 Rp28.180.000

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
TO-220FP-3
Through Hole
Single
650 V
1.55 V
- 20 V, 20 V
40 A
32.6 W
- 55 C
+ 175 C
STGF20M65DF2
Tube
Brand: STMicroelectronics
Continuous Collector Current Ic Max: 40 A
Gate-Emitter Leakage Current: 250 uA
Product Type: IGBT Transistors
Factory Pack Quantity: 1000
Subcategory: IGBTs
Unit Weight: 2 g
Products found:
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Attributes selected: 0

Compliance Codes
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

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