STGF5H60DF

STMicroelectronics
511-STGF5H60DF
STGF5H60DF

Mfr.:

Description:
IGBTs Trench gate field-stop IGBT, H series 600 V, 5 A high speed

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In Stock: 2.258

Stock:
2.258 Can Dispatch Immediately
Factory Lead Time:
15 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 2258 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp29.537 Rp29.537
Rp16.383 Rp163.830
Rp12.567 Rp1.256.700
Rp10.090 Rp5.045.000
Rp8.733 Rp8.733.000
Rp8.292 Rp16.584.000
Rp7.485 Rp37.425.000
Rp7.155 Rp71.550.000

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
TO-220FP-3
Through Hole
Single
600 V
1.5 V
- 20 V, 20 V
10 A
24 W
- 55 C
+ 175 C
STGF5H60DF
Tube
Brand: STMicroelectronics
Continuous Collector Current Ic Max: 10 A
Gate-Emitter Leakage Current: +/- 250 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 1000
Subcategory: IGBTs
Unit Weight: 2,300 g
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Attributes selected: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

1200V H Series Trench Gate Field-Stop IGBTs

STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. With ST's advanced Trench-Gate Field-Stop High-Speed technology, these IGBTs have a 5μs minimum short circuit withstand time at TJ=150°C, minimal collector current turn off tail, and very low saturation voltage (VCE(sat)) down to 2.1V (typical) to minimize energy losses during switching and when turned on. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.