STGP10H60DF

STMicroelectronics
511-STGP10H60DF
STGP10H60DF

Mfr.:

Description:
IGBTs Trench gate H series 600V 10A HiSpd
Complete Your Design

Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.
More Information
Learn more about STMicroelectronics STGP10H60DF

In Stock: 1.971

Stock:
1.971 Can Dispatch Immediately
Factory Lead Time:
15 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp39.994 Rp39.994
Rp17.447 Rp174.470
Rp15.979 Rp1.597.900
Rp13.778 Rp6.889.000
Rp12.806 Rp12.806.000
Rp11.778 Rp23.556.000
Rp10.861 Rp54.305.000

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
TO-220-3
Through Hole
Single
600 V
1.5 V
- 20 V, 20 V
20 A
115 W
- 55 C
+ 175 C
STGP10H60DF
Tube
Brand: STMicroelectronics
Continuous Collector Current Ic Max: 10 A
Gate-Emitter Leakage Current: 250 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 1000
Subcategory: IGBTs
Unit Weight: 6 g
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

An unexpected error has occurred.


Have a question? Please visit the Help Centre.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.