STGP10M65DF2

STMicroelectronics
511-STGP10M65DF2
STGP10M65DF2

Mfr.:

Description:
IGBTs Trench gate field-stop IGBT M series, 650 V 10 A low loss

ECAD Model:
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Availability

Stock:
0

You can still purchase this product for backorder.

Factory Lead Time:
15 Weeks Estimated factory production time.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp36.325 Rp36.325
Rp23.116 Rp231.160
Rp15.576 Rp1.557.600
Rp12.329 Rp6.164.500
Rp11.264 Rp11.264.000
Rp10.806 Rp21.612.000
Rp10.017 Rp50.085.000

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
STGP10M65DF2
Tube
Brand: STMicroelectronics
Product Type: IGBT Transistors
Factory Pack Quantity: 1000
Subcategory: IGBTs
Unit Weight: 2 g
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Attributes selected: 0

Compliance Codes
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
China
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

STM 650V M Series Trench Gate Field-Stop IGBTs

STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. STMicroelectronics 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. The IGBTs have an optimized design and are available in a tailored built-in anti-parallel diode. A positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.