STGP30H60DF

STMicroelectronics
511-STGP30H60DF
STGP30H60DF

Mfr.:

Description:
IGBTs 600V 30A High Speed Trench Gate IGBT
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Datasheet:
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Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
1.855
Expected 20/08/2026
1.000
Expected 02/11/2026
Factory Lead Time:
15
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp62.743 Rp62.743
Rp31.555 Rp315.550
Rp28.436 Rp2.843.600
Rp23.116 Rp11.558.000
Rp21.281 Rp21.281.000
Rp21.098 Rp42.196.000

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
TO-220-3
Through Hole
Single
600 V
2.4 V
- 20 V, 20 V
60 A
260 W
- 40 C
+ 175 C
STGP30H60DF
Tube
Brand: STMicroelectronics
Gate-Emitter Leakage Current: 250 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 1000
Subcategory: IGBTs
Unit Weight: 2,300 g
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Attributes selected: 0

Compliance Codes
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
China
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

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