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STGW30H65FB

Name: STMicroelectronics STGW30H65FB
Brand: STMicroelectronics
SKU: 511-STGW30H65FB
Price: 81640 IDR
Availability: InStock

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Mouser No:

511-STGW30H65FB

Mfr. No:

STGW30H65FB

Mfr.:

STMicroelectronics

Description:

IGBTs Trench gate field-stop 650 V, 30 A high speed HB series IGBT

Complete Your Design

Datasheet:

STGW30H65FB Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

In Stock: 60

Stock:: 60

Can Dispatch Immediately

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On Order:: 600

Expected 24/08/2026
Factory Lead Time:: 14

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp81.640	Rp81.640
	Rp45.131	Rp451.310
	Rp37.059	Rp3.705.900
	Rp31.188	Rp18.712.800
	Rp27.336	Rp32.803.200

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.75 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	30 A
Pd - Power Dissipation:	260 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	STGW30H65FB
Packaging:	Tube
Brand:	STMicroelectronics
Continuous Collector Current Ic Max:	60 A
Gate-Emitter Leakage Current:	250 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	600
Subcategory:	IGBTs
Unit Weight:	38 g

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Datasheet

STGW30H65FB Datasheet (PDF)

PCN

Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

HB/HB2 Series Insulated-Gate Bipolar Transistors

STMicroelectronics HB/HB2 Series Insulated-Gate Bipolar Transistors (IGBTs) combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary Trench Gate Field-Stop (TGFS) structure.