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STGWA50IH65DF

Name: STMicroelectronics STGWA50IH65DF
Brand: STMicroelectronics
SKU: 511-STGWA50IH65DF
Price: 94849 IDR
Availability: InStock

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Mouser No:

511-STGWA50IH65DF

Mfr. No:

STGWA50IH65DF

Mfr.:

STMicroelectronics

Description:

IGBTs Trench gate field-stop IGBT, 650 V, 50 A soft switching IH series in a TO-247 lo

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Datasheet:

STGWA50IH65DF Datasheet (PDF)

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In Stock: 983

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Factory Lead Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp94.849	Rp94.849
	Rp62.927	Rp629.270
	Rp44.764	Rp4.476.400
	Rp42.930	Rp25.758.000
	Rp37.059	Rp44.470.800

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.5 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	100 A
Pd - Power Dissipation:	300 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	HB2
Packaging:	Tube
Brand:	STMicroelectronics
Continuous Collector Current Ic Max:	100 A
Gate-Emitter Leakage Current:	250 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	600
Subcategory:	IGBTs
Unit Weight:	6,100 g

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Datasheet

STGWA50IH65DF Datasheet (PDF)

PCN

Compliance Codes

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

650V IH Series IGBTs

STMicroelectronics 650V IH Series IGBTs offer high efficiency for induction heating systems and soft switching applications. The STMicroelectronics IGBTs belong to the STPOWER™ family that exceeds the HB series, currently used for induction heating applications. The 650V IH series ensures increased efficiency in final applications thanks to a lower V_CE(sat) combined with very low turn-off energy. 40A and 50A devices are already available in TO-247 Long Leads packages, and 20A and 30A devices are being developed.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low R_DS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.