STGWA8M120DF3

STMicroelectronics
511-STGWA8M120DF3
STGWA8M120DF3

Mfr.:

Description:
IGBTs Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
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Datasheet:
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Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
592
Expected 21/12/2026
Factory Lead Time:
14
Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 592 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp79.622 Rp79.622
Rp52.470 Rp524.700
Rp36.875 Rp3.687.500
Rp29.721 Rp17.832.600
Rp29.354 Rp35.224.800

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
TO-247-3
Through Hole
Single
1.2 kV
1.85 V
- 20 V, 20 V
16 A
167 W
- 55 C
+ 175 C
M
Tube
Brand: STMicroelectronics
Gate-Emitter Leakage Current: 250 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 600
Subcategory: IGBTs
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Attributes selected: 0

Datasheet

PCN

Compliance Codes
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

M Series 1200V Trench Gate Field-Stop IGBTs

STMicroelectronics M Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. These devices represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. A positive VCE(sat) temperature coefficient and tight parameter distribution also result in safer paralleling operation. Typical applications for these devices include industrial drives, UPS, solar, and welding.

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