STGWT30H65FB

STMicroelectronics
511-STGWT30H65FB
STGWT30H65FB

Mfr.:

Description:
IGBTs PTD IGBT & IPM
Complete Your Design

Lifecycle:
End of Life:
Scheduled for obsolescence and will be discontinued by the manufacturer.
Datasheet:
ECAD Model:
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In Stock: 283

Stock:
283 Can Dispatch Immediately
Quantities greater than 283 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp65.495 Rp65.495
Rp36.875 Rp368.750
Rp30.271 Rp3.027.100
Rp29.904 Rp17.942.400
Rp28.987 Rp34.784.400
Rp28.069 Rp75.786.300
Rp26.969 Rp137.541.900

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
TO-3P
Through Hole
Single
650 V
1.75 V
- 20 V, 20 V
30 A
260 W
- 55 C
+ 175 C
STGWT30H65FB
Tube
Brand: STMicroelectronics
Continuous Collector Current Ic Max: 60 A
Gate-Emitter Leakage Current: 250 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 300
Subcategory: IGBTs
Unit Weight: 6,756 g
Products found:
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Attributes selected: 0

Compliance Codes
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
Korea, Republic of
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

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