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STGYA50M120DF3

Name: STMicroelectronics STGYA50M120DF3
Brand: STMicroelectronics
SKU: 511-STGYA50M120DF3
Price: 110076 IDR
Availability: InStock

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Mouser No:

511-STGYA50M120DF3

Mfr. No:

STGYA50M120DF3

Mfr.:

STMicroelectronics

Description:

IGBTs Trench gate field-stop, 1200 V, 50 A, low-loss M series IGBT

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Datasheet:

STGYA50M120DF3 Datasheet (PDF)

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In Stock: 1.142

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Factory Lead Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp110.076	Rp110.076
	Rp79.622	Rp796.220
	Rp70.999	Rp8.519.880
	Rp66.963	Rp34.151.130
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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	Max247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	2.1 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	100 A
Pd - Power Dissipation:	535 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	M
Packaging:	Tube
Brand:	STMicroelectronics
Gate-Emitter Leakage Current:	250 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	30
Subcategory:	IGBTs
Unit Weight:	4,430 g

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Datasheet

STGYA50M120DF3 Datasheet (PDF)

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

M Series 1200V Trench Gate Field-Stop IGBTs

STMicroelectronics M Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. These devices represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. A positive V_CE(sat) temperature coefficient and tight parameter distribution also result in safer paralleling operation. Typical applications for these devices include industrial drives, UPS, solar, and welding.