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STH3N150-2

Name: STMicroelectronics STH3N150-2
Brand: STMicroelectronics
SKU: 511-STH3N150-2
Price: 101820 IDR
Availability: InStock

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Mouser No:

511-STH3N150-2

Mfr. No:

STH3N150-2

Mfr.:

STMicroelectronics

Description:

MOSFETs N-CH 1500V 6Ohm 2.5A PowerMESH

Complete Your Design

Datasheet:

STH3N150-2 Datasheet (PDF)

ECAD Model:

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In Stock: 815

Stock:: 815

Can Dispatch Immediately

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On Order:: 1.000

Expected 13/04/2026
Factory Lead Time:: 13

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 1000)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp101.820	Rp101.820
	Rp72.834	Rp728.340
	Rp53.387	Rp5.338.700
	Rp52.836	Rp26.418.000
Full Reel (Order in multiples of 1000)
	Rp42.930	Rp42.930.000
10.000	Quote

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	H2PAK-2
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.5 kV
Id - Continuous Drain Current:	2.5 A
Rds On - Drain-Source Resistance:	9 Ohms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	29.3 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	140 W
Channel Mode:	Enhancement
Tradename:	PowerMESH
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	61 ns
Forward Transconductance - Min:	2.6 S
Product Type:	MOSFETs
Rise Time:	47 ns
Series:	STH3N150-2
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel Power MOSFET
Typical Turn-Off Delay Time:	45 ns
Typical Turn-On Delay Time:	24 ns
Unit Weight:	4 g

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Datasheet

STH3N150-2 Datasheet (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

N-Channel PowerMESH Power MOSFETs

STMicroelectronics N-Channel PowerMESH Power MOSFETs are designed with the STMicroelectronics consolidated strip-layout based MESH OVERLAY™ process. This process results in an advanced family of high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the proprietary edge termination structure, gives the lowest R_DS(on) per area, unrivaled gate charge, and switching characteristics.