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STL36N60M6

Name: STMicroelectronics STL36N60M6
Brand: STMicroelectronics
SKU: 511-STL36N60M6
Price: 48617 IDR
Availability: OutOfStock

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Mouser No:

511-STL36N60M6

Mfr. No:

STL36N60M6

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 600 V, 91 mOhm typ., 25 A MDmesh M6 Power MOSFET in a PowerFLAT 8x8 HV

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Datasheet:

STL36N60M6 Datasheet (PDF)

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Availability

Stock:: Non-Stocked

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Factory Lead Time:: 26 Weeks Estimated factory production time.

Long lead time reported on this product.

Enter Quantity:

Minimum: 3000 Multiples: 3000

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Full Reel (Order in multiples of 3000)
	Rp48.617	Rp145.851.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerFLAT-8x8-5
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	25 A
Rds On - Drain-Source Resistance:	110 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	3.25 V
Qg - Gate Charge:	44.3 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	160 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Reel
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	7.3 ns
Moisture Sensitive:	Yes
Product Type:	MOSFETs
Rise Time:	5.3 ns
Series:	Mdmesh M6
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	50.2 ns
Typical Turn-On Delay Time:	15.2 ns
Unit Weight:	180 mg

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Datasheet

STL36N60M6 Datasheet (PDF)

PCN

Compliance Codes

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

MDmesh™ M6 MOSFETs

STMicroelectronics MDmesh™ M6 MOSFETs combine a low gate charge (Q_g) with an optimised capacitance profile to target high efficiency on new topologies in power conversion applications. The super-junction MDmesh M6 series offers extremely high-efficiency performance resulting in increased power density and a low gate charge for high frequencies. The M6 series MOSFETs have a breakdown voltage ranging from 600 to 700V. They are available in a wide range of packaging options, including a TO-Leadless (TO-LL) package solution, allowing efficient thermal management. The devices include a wide range of operating voltages for industrial applications, including chargers, adapters, silver box modules, LED lighting, telecoms, servers, and solar.