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STL86N3LLH6AG

Name: STMicroelectronics STL86N3LLH6AG
Brand: STMicroelectronics
SKU: 511-STL86N3LLH6AG
Price: 10824 IDR
Availability: OutOfStock

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Mouser No:

511-STL86N3LLH6AG

Mfr. No:

STL86N3LLH6AG

Mfr.:

STMicroelectronics

Description:

MOSFETs Automotive-grade N-channel 30 V, 4 mOhm typ., 80 A STripFET H6 Power MOSFET in a

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Datasheet:

STL86N3LLH6AG Datasheet (PDF)

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Availability

Stock:: Non-Stocked

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Factory Lead Time:: 15 Weeks Estimated factory production time.

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Minimum: 3000 Multiples: 3000

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Full Reel (Order in multiples of 3000)
	Rp10.824	Rp32.472.000
	Rp10.604	Rp63.624.000
	Rp10.219	Rp91.971.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerFLAT-5x6-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	80 A
Rds On - Drain-Source Resistance:	5.2 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	17 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	60 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	12 ns
Product Type:	MOSFETs
Rise Time:	30 ns
Series:	STL86N3LLH6AG
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	37 ns
Typical Turn-On Delay Time:	9.5 ns
Unit Weight:	76 mg

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Datasheet

STL86N3LLH6AG Datasheet (PDF)

PCN

Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

STripFET VI™ Power MOSFETs

STMicroelectronics STripFET VI™ Power MOSFETs are enhancement-mode MOSFETs that benefit from STMicroelectronics proprietary STripFET technology with an updated gate structure. The resulting STripFET Power MOSFET uses a trench technology for high efficiency and low R_DS(on) required by various automotive and industrial switching applications such as motor control, UPS, DC/DC converters, induction heater vaporizers, and solar. These STMicroelectronics MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses, and high power density.

STripFET Power MOSFETs

STMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET technology with a new gate structure. The resulting STripFET Power MOSFET exhibits the high current and low R_DS(on) required by automotive and industrial switching applications such as motor control, uninterruptible power supplies (UPS), DC/DC converters, induction heater vaporizers, and solar. STMicroelectronics STripFET Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses, and high power density.