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STLD200N4F6AG

Name: STMicroelectronics STLD200N4F6AG
Brand: STMicroelectronics
SKU: 511-STLD200N4F6AG
Price: 73567 IDR
Availability: InStock

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See Product Specifications

Mouser No:

511-STLD200N4F6AG

Mfr. No:

STLD200N4F6AG

Mfr.:

STMicroelectronics

Description:

MOSFETs Automotive-grade N-channel 40 V, 1.27 mOhm typ., 120 A STripFET F6 Power MOSFET

Complete Your Design

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

STLD200N4F6AG Datasheet (PDF)

ECAD Model:

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More Information

Learn more about STMicroelectronics STLD200N4F6AG

In Stock: 2.251

Stock:: 2.251 Can Dispatch Immediately

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Factory Lead Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

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Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp73.567	Rp73.567
	Rp48.433	Rp484.330
	Rp35.224	Rp3.522.400
	Rp31.188	Rp15.594.000
	Rp30.454	Rp30.454.000
Full Reel (Order in multiples of 2500)
	Rp24.217	Rp60.542.500

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerFLAT-5x6-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	120 A
Rds On - Drain-Source Resistance:	1.27 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	172 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	158 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Tradename:	STripFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	410 ns
Product Type:	MOSFETs
Rise Time:	440 ns
Series:	STLD200N4F6AG
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	600 ns
Typical Turn-On Delay Time:	150 ns
Unit Weight:	76 mg

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Datasheet

STLD200N4F6AG Datasheet (PDF)

PCN

Product Change Notification 2025-7-23 (PDF)

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

STripFET VI™ Power MOSFETs

STMicroelectronics STripFET VI™ Power MOSFETs are enhancement-mode MOSFETs that benefit from STMicroelectronics proprietary STripFET technology with an updated gate structure. The resulting STripFET Power MOSFET uses a trench technology for high efficiency and low R_DS(on) required by various automotive and industrial switching applications such as motor control, UPS, DC/DC converters, induction heater vaporizers, and solar. These STMicroelectronics MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses, and high power density.

STripFET Power MOSFETs

STMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET technology with a new gate structure. The resulting STripFET Power MOSFET exhibits the high current and low R_DS(on) required by automotive and industrial switching applications such as motor control, uninterruptible power supplies (UPS), DC/DC converters, induction heater vaporizers, and solar. STMicroelectronics STripFET Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses, and high power density.