STO33N60M6

STMicroelectronics
511-STO33N60M6
STO33N60M6

Mfr.:

Description:
MOSFETs N-channel 600 V, 105 mOhm typ., 25 A MDmesh M6 Power MOSFET
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Datasheet:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
52 Weeks Estimated factory production time.
Long lead time reported on this product.
Minimum: 1800   Multiples: 1800
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Full Reel (Order in multiples of 1800)
Rp40.728 Rp73.310.400

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
TO-LL-8
N-Channel
1 Channel
600 V
25 A
125 mOhms
- 25 V, 25 V
4.75 V
33.4 nC
- 55 C
+ 150 C
230 W
Enhancement
MDmesh
Reel
Brand: STMicroelectronics
Configuration: Single
Fall Time: 7.5 ns
Product Type: MOSFETs
Rise Time: 33 ns
Series: MDmesh M6
Factory Pack Quantity: 1800
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 38.5 ns
Typical Turn-On Delay Time: 19.5 ns
Unit Weight: 76 mg
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Attributes selected: 0

Datasheet

PCN

Technical Resources

Compliance Codes
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
Malaysia
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

STO65N60DM6 Power MOSFET

STMicroelectronics STO65N60DM6 Power MOSFET is part of the MDmesh DM6 fast recovery diode series combining very low recovery charge (Qrr), recovery time (trr), and excellent improvement in RDS(on). The STO65N60DM6 offers excellent switching performance via the extra driving source pin. This performance makes the STM STO65N60DM6 Power MOSFET ideal for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

STO67N60x MDmesh Power MOSFETs

STMicroelectronics STO67N60x MDmesh Power MOSFETs are Zener-protected and 100% avalanche-tested N-channel power MOSFETs suited for switching applications. These power MOSFETs feature excellent switching performance, low gate input resistance, and lower RDS(on) per area compared to the previous generation. The STO67N60DM6 power MOSFET is a fast-recovery body diode and combines a very low recovery charge (Qrr) and recovery time (trr) with the most effective switching behavior. The STMicroelectronics STO67N60M6 power MOSFET is ideal for LLC converters and boost PFC converters.

MDmesh™ M6 MOSFETs

STMicroelectronics MDmesh™ M6 MOSFETs combine a low gate charge (Qg) with an optimised capacitance profile to target high efficiency on new topologies in power conversion applications. The super-junction MDmesh M6 series offers extremely high-efficiency performance resulting in increased power density and a low gate charge for high frequencies. The M6 series MOSFETs have a breakdown voltage ranging from 600 to 700V. They are available in a wide range of packaging options, including a TO-Leadless (TO-LL) package solution, allowing efficient thermal management. The devices include a wide range of operating voltages for industrial applications, including chargers, adapters, silver box modules, LED lighting, telecoms, servers, and solar.

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