STO60N045DM9

STMicroelectronics
511-STO60N045DM9
STO60N045DM9

Mfr.:

Description:
MOSFETs N-channel 600 V, 39 mOhm typ., 55 A, MDmesh DM9 Power MOSFET in a TO-LL package

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
1.800
Expected 04/09/2026
Factory Lead Time:
52
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp185.295 Rp185.295
Rp126.771 Rp1.267.710
Rp101.086 Rp10.108.600
Rp96.317 Rp48.158.500
Rp89.162 Rp89.162.000
Full Reel (Order in multiples of 1800)
Rp89.162 Rp160.491.600

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: MOSFETs
RoHS:  
Reel
Cut Tape
Brand: STMicroelectronics
Product Type: MOSFETs
Series: MDmesh DM9
Factory Pack Quantity: 1800
Subcategory: Transistors
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Compliance Codes
TARIC:
8541290000
Origin Classifications
Country of Origin:
Not available
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

MDmesh™ M9 Power MOSFETs

STMicroelectronics MDmesh™ M9 Power MOSFETs feature enhanced device structure, low ON resistance, and low gate charge values. These power MOSFETs offer high reverse diode dv/dt and MOSFET dv/dt ruggedness, high power density, and low conduction losses. The MDmesh M9 Power MOSFETs also offer high switching speed, high efficiency, and low switching power losses. These power MOSFETs are designed with innovative high-voltage super-junction technology that delivers impressive Figure of Merit ((FoM). The high FoM enables higher power levels and density for more compact solutions. Typical applications include servers, telecom data centers, 5G power stations, microinverters, and fast chargers.

STP60N043DM9 MDmesh DM9 Power MOSFET

STMicroelectronics STP60N043DM9 MDmesh DM9 Power MOSFET is designed for medium/high voltage MOSFETs featuring very low RDS(on) per area coupled with a fast-recovery diode. The device implements innovative super-junction MDmesh DM9 technology offering a multi-drain manufacturing process that allows for an enhanced device structure.