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STO68N65DM6

Name: STMicroelectronics STO68N65DM6
Brand: STMicroelectronics
SKU: 511-STO68N65DM6
Price: 93565 IDR
Availability: OutOfStock

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Mouser No:

511-STO68N65DM6

Mfr. No:

STO68N65DM6

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 650 V, 53 mOhm typ., 55 A MDmesh DM6 Power MOSFET

Complete Your Design

Datasheet:

STO68N65DM6 Datasheet (PDF)

ECAD Model:

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Availability

Stock:: Non-Stocked

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Factory Lead Time:: 52 Weeks Estimated factory production time.

Long lead time reported on this product.

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Minimum: 1800 Multiples: 1800

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Full Reel (Order in multiples of 1800)
	Rp93.565	Rp168.417.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TO-LL-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	55 A
Rds On - Drain-Source Resistance:	65 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	4.75 V
Qg - Gate Charge:	80 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	240 W
Channel Mode:	Enhancement
Packaging:	Reel
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	7.5 ns
Product Type:	MOSFETs
Rise Time:	12 ns
Series:	MDmesh DM6
Factory Pack Quantity:	1800
Subcategory:	Transistors
Typical Turn-Off Delay Time:	69 ns
Typical Turn-On Delay Time:	23 ns
Unit Weight:	697 mg

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Datasheet

STO68N65DM6 Datasheet (PDF)

Technical Resources

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Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Malaysia
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

MDmesh™ M6 MOSFETs

STMicroelectronics MDmesh™ M6 MOSFETs combine a low gate charge (Q_g) with an optimised capacitance profile to target high efficiency on new topologies in power conversion applications. The super-junction MDmesh M6 series offers extremely high-efficiency performance resulting in increased power density and a low gate charge for high frequencies. The M6 series MOSFETs have a breakdown voltage ranging from 600 to 700V. They are available in a wide range of packaging options, including a TO-Leadless (TO-LL) package solution, allowing efficient thermal management. The devices include a wide range of operating voltages for industrial applications, including chargers, adapters, silver box modules, LED lighting, telecoms, servers, and solar.