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STP5N105K5

Name: STMicroelectronics STP5N105K5
Brand: STMicroelectronics
SKU: 511-STP5N105K5
Price: 64945 IDR
Availability: InStock

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Mouser No:

511-STP5N105K5

Mfr. No:

STP5N105K5

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 1050 V, 2.9 Ohm typ., 3 A MDmesh K5 Power MOSFETs in TO-220 package

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Datasheet:

STP5N105K5 Datasheet (PDF)

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In Stock: 711

Stock:: 711 Can Dispatch Immediately

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp64.945	Rp64.945
	Rp33.390	Rp333.900
	Rp28.620	Rp2.862.000
	Rp24.584	Rp12.292.000
	Rp22.382	Rp22.382.000
	Rp21.465	Rp42.930.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.05 kV
Id - Continuous Drain Current:	3 A
Rds On - Drain-Source Resistance:	3.5 Ohms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	12.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	85 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	24 ns
Product Type:	MOSFETs
Rise Time:	8.5 ns
Series:	STP5N105K5
Factory Pack Quantity:	1000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	31 ns
Typical Turn-On Delay Time:	15.5 ns
Unit Weight:	2 g

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Datasheet

STP5N105K5 Datasheet (PDF)

PCN

Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

MDmesh K5 Power MOSFETs

STMicroelectronics MDmesh K5 series are very-high voltage MOSFETs with super-junction, industry's best R_DS(on), and figure of merit for increased power density and efficiency. Typical applications include LED lighting, metering, solar inverters, 3-phase auxiliary power supplies, welding, and automotive battery management.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low R_DS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.