STP80N1K1K6

STMicroelectronics
511-STP80N1K1K6
STP80N1K1K6

Mfr.:

Description:
MOSFETs N-channel 800 V, 1.0 Ohm typ., 5 A MDmesh K6 Power MOSFET

ECAD Model:
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In Stock: 1.060

Stock:
1.060 Can Dispatch Immediately
Factory Lead Time:
16 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp46.782 Rp46.782
Rp30.087 Rp300.870
Rp20.548 Rp2.054.800
Rp16.420 Rp8.210.000
Rp15.594 Rp15.594.000
Rp14.016 Rp28.032.000

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: MOSFETs
RoHS:  
Si
Tube
Brand: STMicroelectronics
Product Type: MOSFETs
Factory Pack Quantity: 1000
Subcategory: Transistors
Unit Weight: 2 g
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Compliance Codes
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

STP80N1K1K6 N-Channel Power MOSFET

STMicroelectronics STP80N1K1K6 N-Channel Power MOSFET uses MDmesh K6 technology, leveraging 20 years of experience in super junction technology. The STMicroelectronics STP80N1K1K6 MOSFET offers top-notch on-resistance per area and gate charge. The device is ideal for high-power density and efficient applications.

N-Channel MDmesh K6 Power MOSFETs

STMicroelectronics N-Channel MDmesh K6 Power MOSFETs are Zener-protected and 100% avalanche-tested. These power MOSFETs feature 800V minimum drain-source breakdown voltage, ±30V gate-source voltage, and -55°C to 150°C operating junction temperature range. The MDmesh K6 Power MOSFETs also feature 5V/ns peak diode recovery voltage slope, 100A/µs peak diode recovery current slope, and 120V/ns MOSFET dv/dt ruggedness. Typical applications include notebook and AIO, flyback converters, adapters for tablets, and LED lighting.