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STP80N340K6

Name: STMicroelectronics STP80N340K6
Brand: STMicroelectronics
SKU: 511-STP80N340K6
Price: 37242 IDR
Availability: OutOfStock

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Mouser No:

511-STP80N340K6

Mfr. No:

STP80N340K6

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 800 V, 285 mOhm typ., 12 A MDmesh K6 Power MOSFET in a TO-220 package

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Datasheet:

STP80N340K6 Datasheet (PDF)

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Availability

Stock:: Non-Stocked

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Factory Lead Time:: 16 Weeks Estimated factory production time.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp37.242	Rp37.242.000
	Rp35.958	Rp71.916.000
	Rp35.591	Rp177.955.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	800 V
Id - Continuous Drain Current:	12 A
Rds On - Drain-Source Resistance:	340 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	3.5 V
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	115 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	11 ns
Product Type:	MOSFETs
Rise Time:	4.9 ns
Factory Pack Quantity:	1000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	34 ns
Typical Turn-On Delay Time:	13 ns

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Datasheet

STP80N340K6 Datasheet (PDF)

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Compliance Codes

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

N-Channel MDmesh K6 Power MOSFETs

STMicroelectronics N-Channel MDmesh K6 Power MOSFETs are Zener-protected and 100% avalanche-tested. These power MOSFETs feature 800V minimum drain-source breakdown voltage, ±30V gate-source voltage, and -55°C to 150°C operating junction temperature range. The MDmesh K6 Power MOSFETs also feature 5V/ns peak diode recovery voltage slope, 100A/µs peak diode recovery current slope, and 120V/ns MOSFET dv/dt ruggedness. Typical applications include notebook and AIO, flyback converters, adapters for tablets, and LED lighting.