STP9N65M2

STMicroelectronics
511-STP9N65M2
STP9N65M2

Mfr.:

Description:
MOSFETs N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in TO-220 package
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Lifecycle:
End of Life:
Scheduled for obsolescence and will be discontinued by the manufacturer.
Datasheet:
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Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: MOSFETs
RoHS:  
Through Hole
STP9N65M2
MDmesh
- 55 C
+ 150 C
Tube
Brand: STMicroelectronics
Channel Mode: Enhancement
Configuration: Single
Fall Time: 18 ns
Id - Continuous Drain Current: 5 A
Number of Channels: 1 Channel
Package/Case: TO-220-3
Pd - Power Dissipation: 60 W
Product Type: MOSFETs
Qg - Gate Charge: 10 nC
Rds On - Drain-Source Resistance: 900 mOhms
Rise Time: 6.6 ns
Factory Pack Quantity: 1000
Subcategory: Transistors
Technology: Si
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 22.5 ns
Typical Turn-On Delay Time: 7.5 ns
Vds - Drain-Source Breakdown Voltage: 650 V
Vgs - Gate-Source Voltage: 25 V
Vgs th - Gate-Source Threshold Voltage: 3 V
Unit Weight: 2 g
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ST NCNR & NON Warrantied

Stock on hand has no manufacture warranty.

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5-1013-36

Compliance Codes
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

MDmesh™ II Power MOSFETs

STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between RDS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.

In Stock: 903

Stock:
903 Can Dispatch Immediately
Factory Lead Time:
24 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 903 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp45.131 Rp45.131
Rp28.987 Rp289.870
Rp19.814 Rp1.981.400
Rp18.273 Rp9.136.500
Rp14.383 Rp14.383.000
Rp13.961 Rp27.922.000
Rp13.429 Rp67.145.000

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MOSFETs N-channel 650 V, 0.60 Ohm typ., 7 A MDmesh M2 Power MOSFET in TO-220 package
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