STPSC406B-TR

STMicroelectronics
511-STPSC406B-TR
STPSC406B-TR

Mfr.:

Description:
SiC Schottky Diodes 600 V Power Schottky Diode
Complete Your Design

Lifecycle:
NRND:
Not recommended for new designs.
Datasheet:
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In Stock: 680

Stock:
680 Can Dispatch Immediately
Factory Lead Time:
19 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2500)

Pricing (IDR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
Rp46.048 Rp46.048
Rp29.354 Rp293.540
Rp20.364 Rp2.036.400
Rp16.255 Rp8.127.500
Rp15.814 Rp15.814.000
Full Reel (Order in multiples of 2500)
Rp13.558 Rp33.895.000
Rp13.136 Rp65.680.000
† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: SiC Schottky Diodes
RoHS:  
SMD/SMT
DPAK
Single
4 A
600 V
1.9 V
14 A
50 uA
- 40 C
+ 175 C
STPSC
Reel
Cut Tape
MouseReel
Brand: STMicroelectronics
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 2500
Subcategory: Diodes & Rectifiers
Unit Weight: 1,700 g
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Attributes selected: 0

CNHTS:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
JPHTS:
8541100901
KRHTS:
8541109000
TARIC:
8542399000
MXHTS:
85423999
ECCN:
EAR99

600V Power Schottky Silicon Carbide Diode

STMicroelectronics' 600V Power Schottky Silicon Carbide Diodes are ultra high performance power Schottky diodes. They are manufactured using a silicon carbide substrate. The wide band gap material of these allows the design of a Schottky diode structured with a 600V rating. Due to the Schottky construction of these diodes no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. These Power Schottky Silicon Carbide Diodes will boost the performance of PFC operations in hard switching conditions.

STPSC Schottky Silicon-Carbide Diodes

STMicroelectronics Schottky Silicon-Carbide Diodes take advantage of SiC's superior physical characteristics over standard silicon, with four times better dynamic characteristics and 15% less forward voltage (VF). The low reverse recovery characteristics make ST's silicon-carbide diodes a key contributor to energy savings in SMPS applications and in emerging domains such as solar energy conversion, EV or HEV charging stations. They are also ideal for other applications such as welding equipment and air conditioners. STMicroelectronics SiC product portfolio includes a 20A, 600V diode, housed in a halogen-free TO-247 package, to extend its 4A to 12A, through-hole, and SMD package offer. The second generation, with a 6A, 1200V device, and a 650V series are also available.

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