STPSC8H065BY-TR

STMicroelectronics
511-STPSC8H065BY-TR
STPSC8H065BY-TR

Mfr.:

Description:
SiC Schottky Diodes Automotive 650 V, 8 A Silicon Carbide Diode
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In Stock: 1.552

Stock:
1.552 Can Dispatch Immediately
Factory Lead Time:
19 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2500)

Pricing (IDR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
Rp71.916 Rp71.916
Rp46.966 Rp469.660
Rp34.307 Rp3.430.700
Rp28.620 Rp14.310.000
Rp26.602 Rp26.602.000
Full Reel (Order in multiples of 2500)
Rp24.400 Rp61.000.000
Rp24.033 Rp120.165.000
† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: SiC Schottky Diodes
RoHS:  
SMD/SMT
DPAK
Single
8 A
650 V
1.45 V
75 A
7 uA
- 40 C
+ 175 C
STPSC
AEC-Q101
Reel
Cut Tape
MouseReel
Brand: STMicroelectronics
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 2500
Subcategory: Diodes & Rectifiers
Vr - Reverse Voltage: 650 V
Unit Weight: 320 mg
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Attributes selected: 0

Compliance Codes
USHTS:
8541100080
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

Standard Products

STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discretes, and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of STMicroelectronics design aids, including SPICE, IBIS models, and simulation tools, is available to make adding to a design-in easy.

STPSC Schottky Silicon-Carbide Diodes

STMicroelectronics Schottky Silicon-Carbide Diodes take advantage of SiC's superior physical characteristics over standard silicon, with four times better dynamic characteristics and 15% less forward voltage (VF). The low reverse recovery characteristics make ST's silicon-carbide diodes a key contributor to energy savings in SMPS applications and in emerging domains such as solar energy conversion, EV or HEV charging stations. They are also ideal for other applications such as welding equipment and air conditioners. STMicroelectronics SiC product portfolio includes a 20A, 600V diode, housed in a halogen-free TO-247 package, to extend its 4A to 12A, through-hole, and SMD package offer. The second generation, with a 6A, 1200V device, and a 650V series are also available.

STPSC 650V Schottky Silicon-Carbide Diodes

STMicroelectronics STPSC 650V Schottky Silicon-Carbide Diodes are ultra-high-performance power Schottky diodes. The wide bandgap material allows the design of a Schottky diode structure with a 650V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. These STMicroelectronics devices are especially suited for PFC applications, boosting performance in hard switching conditions. High forward surge capability ensures good robustness during transient phases.

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