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STW68N65DM6-4AG

Name: STMicroelectronics STW68N65DM6-4AG
Brand: STMicroelectronics
SKU: 511-STW68N65DM6-4AG
Price: 254459 IDR
Availability: InStock

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Mouser No:

511-STW68N65DM6-4AG

Mfr. No:

STW68N65DM6-4AG

Mfr.:

STMicroelectronics

Description:

MOSFETs Automotive-grade N-channel 650 V, 33 mOhm typ., 72 A MDmesh DM6 Power MOSFET in

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Datasheet:

STW68N65DM6-4AG Datasheet (PDF)

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In Stock: 7

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Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp254.459	Rp254.459
	Rp157.409	Rp1.574.090
	Rp135.027	Rp13.502.700
	Rp132.275	Rp79.365.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	72 A
Rds On - Drain-Source Resistance:	39 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	4.75 V
Qg - Gate Charge:	118 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	480 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Tradename:	MDmesh
Packaging:	Tube
Brand:	STMicroelectronics
Product Type:	MOSFETs
Factory Pack Quantity:	600
Subcategory:	Transistors
Unit Weight:	6,080 g

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Datasheet

STW68N65DM6-4AG Datasheet (PDF)

Compliance Codes

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

MDmesh DM6 N-channel Power MOSFETs

STMicroelectronics MDmesh DM6 N-channel Power MOSFETs are part of the MDmesh™ DM6 fast-recovery diodes. These automotive-grade N-channel power MOSFETs offer very low recovery charge (Q_rr) and recovery time (t_rr), combined with low R_DS(on). The DM6 power MOSFETs feature low gate charge, low input capacitance, low on-resistance, high dv/dt ruggedness, and Zener-protection. These power MOSFETs are suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.