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STWA60N035M9

Name: STMicroelectronics STWA60N035M9
Brand: STMicroelectronics
SKU: 511-STWA60N035M9
Price: 150804 IDR
Availability: InStock

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Mouser No:

511-STWA60N035M9

Mfr. No:

STWA60N035M9

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 600 V 32 mOhm typ. 62 A MDmesh M9 Power MOSFET in a TO-247 long leads

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New Product:

New from this manufacturer.

Datasheet:

STWA60N035M9 Datasheet (PDF)

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In Stock: 300

Stock:: 300 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp150.804	Rp150.804
	Rp109.709	Rp1.097.090

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	62 A
Rds On - Drain-Source Resistance:	35 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	4.2 V
Qg - Gate Charge:	112 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	321 mW
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	4.2 ns
Product Type:	MOSFETs
Rise Time:	11 nc
Factory Pack Quantity:	30
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	81 ns
Typical Turn-On Delay Time:	28 ns

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Datasheet

STWA60N035M9 Datasheet (PDF)

TARIC:: 8541290000

MDmesh™ M9 Power MOSFETs

STMicroelectronics MDmesh™ M9 Power MOSFETs feature enhanced device structure, low ON resistance, and low gate charge values. These power MOSFETs offer high reverse diode dv/dt and MOSFET dv/dt ruggedness, high power density, and low conduction losses. The MDmesh M9 Power MOSFETs also offer high switching speed, high efficiency, and low switching power losses. These power MOSFETs are designed with innovative high-voltage super-junction technology that delivers impressive Figure of Merit ((FoM). The high FoM enables higher power levels and density for more compact solutions. Typical applications include servers, telecom data centers, 5G power stations, microinverters, and fast chargers.