+65 6788-9233

Part of the TTI Family of Specialists Contact Mouser (Singapore) +65 6788-9233 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

TSM60NE110CE RVG

Name: Taiwan Semiconductor TSM60NE110CE RVG
Brand: Taiwan Semiconductor
SKU: 821-TSM60NE110CERVG
Price: 55405 IDR
Availability: OutOfStock

Images are for reference only
See Product Specifications

Mouser No:

821-TSM60NE110CERVG

Mfr. No:

TSM60NE110CE RVG

Mfr.:

Taiwan Semiconductor

Description:

MOSFETs 600V, 27A, Single N-Channel High Voltage MOSFETs, PDFN88

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

TSM60NE110CE RVG Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Taiwan Semiconductor TSM60NE110CE RVG

Availability

Stock:: Non-Stocked

An unexpected error occurred. Please try again later.
Factory Lead Time:: 14 Weeks Estimated factory production time.

Enter Quantity:

Minimum: 6000 Multiples: 3000

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Full Reel (Order in multiples of 3000)
	Rp55.405	Rp332.430.000

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Taiwan Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PDFN88-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	27 A
Rds On - Drain-Source Resistance:	110 mOhms
Vgs - Gate-Source Voltage:	30 V
Vgs th - Gate-Source Threshold Voltage:	6 V
Qg - Gate Charge:	56 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	178 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Brand:	Taiwan Semiconductor
Configuration:	Single
Fall Time:	19 ns
Product Type:	MOSFETs
Rise Time:	72 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	57 ns
Typical Turn-On Delay Time:	37 ns
Part # Aliases:	TSM60NE110CE
Unit Weight:	200 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Compliance Codes

TARIC:: 8541290000
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

600V Single N-Channel Power MOSFETs

Taiwan Semiconductor 600V Single N-channel power MOSFETs incorporate super-junction technology and operate within the -55°C to 150°C temperature range. These MOSFETs are Pb-free, RoHS-compliant, and halogen-free. Typical applications include lighting, industrial, and switching applications.