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CSD16322Q5

Name: Texas Instruments CSD16322Q5
Brand: Texas Instruments
SKU: 595-CSD16322Q5
Price: 36875 IDR
Availability: InStock

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Mouser No:

595-CSD16322Q5

Mfr. No:

CSD16322Q5

Mfr.:

Texas Instruments

Description:

MOSFETs N-Channel NexFET Pwr MOSFETs

Datasheet:

CSD16322Q5 Datasheet

ECAD Model:

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More Information

Learn more about Texas Instruments CSD16322Q5

In Stock: 2.337

Stock:: 2.337 Can Dispatch Immediately

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Factory Lead Time:: 12 Weeks Estimated factory production time for quantities greater than shown.

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Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp36.875	Rp36.875
	Rp23.666	Rp236.660
	Rp15.833	Rp1.583.300
	Rp12.549	Rp6.274.500
	Rp11.485	Rp11.485.000
Full Reel (Order in multiples of 2500)
	Rp10.329	Rp25.822.500
	Rp10.255	Rp51.275.000

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	VSON-CLIP-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	25 V
Id - Continuous Drain Current:	100 A
Rds On - Drain-Source Resistance:	5.8 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 10 V
Vgs th - Gate-Source Threshold Voltage:	1.1 V
Qg - Gate Charge:	6.8 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	3.1 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Single
Fall Time:	3.7 ns
Forward Transconductance - Min:	106 S
Product Type:	MOSFETs
Rise Time:	10.7 ns
Series:	CSD16322Q5
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	12.3 ns
Typical Turn-On Delay Time:	6.1 ns
Unit Weight:	110,300 mg

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Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Taiwan
Assembly Country of Origin:: Philippines
Country of Diffusion:: Taiwan

The country is subject to change at the time of shipment.

Texas Instruments NexFET™ Power MOSFET

The Texas Instruments N-Channel NexFET™ Power MOSFET series features low on resistance coupled with extremely low gate charge, making it ideal for high efficiency/high frequency switching converter and Synchronous FET applications. The TI NexFET Power MOSFET combines vertical current flow with a lateral power MOSFET for a level of performance not previously possible with existing silicon platforms. The TI NexFET minimizes losses in power conversion applications and allows designers to achieve 90-percent power supply efficiencies from light to full loads with high output currents and low duty cycles.

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.